IXYS - IXTD1R4N60P 11

KEY Part #: K6400924

[3229PC Stock]


    Nimewo Pati:
    IXTD1R4N60P 11
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 600V.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Modil pouvwa chofè, Tiristors - TRIACs and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in IXYS IXTD1R4N60P 11 electronic components. IXTD1R4N60P 11 can be shipped within 24 hours after order. If you have any demands for IXTD1R4N60P 11, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTD1R4N60P 11 Atribi pwodwi yo

    Nimewo Pati : IXTD1R4N60P 11
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 600V
    Seri : PolarHV™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 600V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 9 Ohm @ 700mA, 10V
    Vgs (th) (Max) @ Id : 5.5V @ 25µA
    Chaje Gate (Qg) (Max) @ Vgs : 5.2nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 140pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 50W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : Die
    Pake / Ka : Die