SI5922DU-T1-GE3 Pricing (USD) [466812PC Stock]
- 1 pcs$0.07963
- 3,000 pcs$0.07923
- Nimewo Pati:
- SI5922DU-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2 N-CH 30V 6A POWERPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Single, Diodes - RF, Transistors - Objektif espesyal, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI5922DU-T1-GE3 electronic components. SI5922DU-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5922DU-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5922DU-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SI5922DU-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2 N-CH 30V 6A POWERPAK
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6A (Tc)
RD sou (Max) @ Id, Vgs :
19.2 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.1nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
765pF @ 15V
Pouvwa - Max :
10.4W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
PowerPAK® ChipFET™ Dual
Pake Aparèy Founisè :
PowerPAK® ChipFet Dual
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