ON Semiconductor - FGY100T65SCDT

KEY Part #: K6424660

FGY100T65SCDT Pricing (USD) [13166PC Stock]

  • 1 pcs$3.13008

Nimewo Pati:
FGY100T65SCDT
Manifakti:
ON Semiconductor
Detaye deskripsyon:
FS3TIGBT TO247 100A 650V.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Transistors - IGBTs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FGY100T65SCDT Atribi pwodwi yo

Nimewo Pati : FGY100T65SCDT
Manifakti : ON Semiconductor
Deskripsyon : FS3TIGBT TO247 100A 650V
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 650V
Kouran - Pèseptè (Ic) (Max) : 200A
Kouran - Pèseptè batman (Icm) : 300A
Vce (sou) (Max) @ Vge, Ic : 1.9V @ 15V, 100A
Pouvwa - Max : 750W
Oblije chanje enèji : 5.4mJ (on), 3.8mJ (off)
Kalite Antre : Standard
Gate chaje : 157nC
Td (on / off) @ 25 ° C : 84ns/216ns
Kondisyon egzamen an : 400V, 100A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) : 62ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3 Variant
Pake Aparèy Founisè : TO-247-3