DMN3018SFG-13 Pricing (USD) [561218PC Stock]
- 1 pcs$0.06591
- 3,000 pcs$0.05384
- Nimewo Pati:
- DMN3018SFG-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 30V 8.5A POWERDI.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN3018SFG-13 electronic components. DMN3018SFG-13 can be shipped within 24 hours after order. If you have any demands for DMN3018SFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3018SFG-13 Atribi pwodwi yo
Nimewo Pati :
DMN3018SFG-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 30V 8.5A POWERDI
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
21 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.2nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
697pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerDI3333-8
Pake / Ka :
8-PowerWDFN
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