Infineon Technologies - IPI70P04P409AKSA1

KEY Part #: K6401851

IPI70P04P409AKSA1 Pricing (USD) [2908PC Stock]

  • 500 pcs$0.38641

Nimewo Pati:
IPI70P04P409AKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH TO262-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPI70P04P409AKSA1 electronic components. IPI70P04P409AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI70P04P409AKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI70P04P409AKSA1 Atribi pwodwi yo

Nimewo Pati : IPI70P04P409AKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH TO262-3
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 72A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 9.4 mOhm @ 70A, 10V
Vgs (th) (Max) @ Id : 4V @ 120µA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4810pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 75W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO262-3-1
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

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