IXYS - IXFX64N50P

KEY Part #: K6412780

IXFX64N50P Pricing (USD) [8978PC Stock]

  • 1 pcs$6.27557

Nimewo Pati:
IXFX64N50P
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 64A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Diodes - RF, Modil pouvwa chofè, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in IXYS IXFX64N50P electronic components. IXFX64N50P can be shipped within 24 hours after order. If you have any demands for IXFX64N50P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX64N50P Atribi pwodwi yo

Nimewo Pati : IXFX64N50P
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 64A PLUS247
Seri : HiPerFET™, PolarHT™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 64A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 85 mOhm @ 32A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 8700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 830W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3