IXYS - IXTV102N20T

KEY Part #: K6407735

[870PC Stock]


    Nimewo Pati:
    IXTV102N20T
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 200V 102A PLUS220.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Diodes - RF, Tiristors - TRIACs, Transistors - JFETs and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
    Avantaj konpetitif:
    We specialize in IXYS IXTV102N20T electronic components. IXTV102N20T can be shipped within 24 hours after order. If you have any demands for IXTV102N20T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IXTV102N20T Atribi pwodwi yo

    Nimewo Pati : IXTV102N20T
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 200V 102A PLUS220
    Seri : TrenchHV™
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 200V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 102A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 23 mOhm @ 500mA, 10V
    Vgs (th) (Max) @ Id : 4.5V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 114nC @ 10V
    Vgs (Max) : ±30V
    Antre kapasite (Ciss) (Max) @ Vds : 6800pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 750W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : PLUS220
    Pake / Ka : TO-220-3, Short Tab

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