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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NDC652P

ON Semiconductor - NDC652P

KEY Part #: K6414196

[12838PC Stock]

    Nimewo Pati:
    NDC652P
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET P-CH 30V 2.4A SSOT6.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Tiristors - SCR, Tiristors - SCR - Modil yo and Diodes - Zener - Single ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor NDC652P electronic components. NDC652P can be shipped within 24 hours after order. If you have any demands for NDC652P, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NDC652P Atribi pwodwi yo

    Nimewo Pati : NDC652P
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET P-CH 30V 2.4A SSOT6
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 30V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.4A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 110 mOhm @ 3.1A, 10V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : -20V
    Antre kapasite (Ciss) (Max) @ Vds : 290pF @ 15V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.6W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : SuperSOT™-6
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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