TK62J60W,S1VQ Pricing (USD) [6297PC Stock]
- 1 pcs$7.20104
- 25 pcs$6.05363
- 100 pcs$5.56274
- Nimewo Pati:
- TK62J60W,S1VQ
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N CH 600V 61.8A TO-3PN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK62J60W,S1VQ electronic components. TK62J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK62J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK62J60W,S1VQ Atribi pwodwi yo
Nimewo Pati :
TK62J60W,S1VQ
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 61.8A TO-3PN
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
61.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
38 mOhm @ 30.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 3.1mA
Chaje Gate (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
6500pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
400W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P(N)
Pake / Ka :
TO-3P-3, SC-65-3
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