[12423PC Stock]
- Nimewo Pati:
- STP10N65K3
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 650V 10A TO220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STP10N65K3 electronic components. STP10N65K3 can be shipped within 24 hours after order. If you have any demands for STP10N65K3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP10N65K3 Atribi pwodwi yo
Nimewo Pati :
STP10N65K3
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 650V 10A TO220
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1 Ohm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1180pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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