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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. LN100LA-G

Microchip Technology - LN100LA-G

KEY Part #: K6523714

[4073PC Stock]

    Nimewo Pati:
    LN100LA-G
    Manifakti:
    Microchip Technology
    Detaye deskripsyon:
    MOSFET 2N-CH 1200V.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Tiristors - TRIACs, Tiristors - SCR, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
    Avantaj konpetitif:
    We specialize in Microchip Technology LN100LA-G electronic components. LN100LA-G can be shipped within 24 hours after order. If you have any demands for LN100LA-G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    LN100LA-G Atribi pwodwi yo

    Nimewo Pati : LN100LA-G
    Manifakti : Microchip Technology
    Deskripsyon : MOSFET 2N-CH 1200V
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Cascoded)
    Karakteristik FET : Standard
    Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
    RD sou (Max) @ Id, Vgs : 3000 Ohm @ 2mA, 2.8V
    Vgs (th) (Max) @ Id : 1.6V @ 10µA
    Chaje Gate (Qg) (Max) @ Vgs : -
    Antre kapasite (Ciss) (Max) @ Vds : 50pF @ 25V
    Pouvwa - Max : 350mW
    Operating Tanperati : -25°C ~ 125°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 6-VFLGA
    Pake Aparèy Founisè : 6-LFGA (3x3)
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    Pati cho