[12344PC Stock]
- Nimewo Pati:
- STSJ100NHS3LL
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 30V 20A PWR8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Tiristors - SCR, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STSJ100NHS3LL electronic components. STSJ100NHS3LL can be shipped within 24 hours after order. If you have any demands for STSJ100NHS3LL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STSJ100NHS3LL Atribi pwodwi yo
Nimewo Pati :
STSJ100NHS3LL
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 30V 20A PWR8SOIC
Seri :
STripFET™ III
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
4.2 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 4.5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
4200pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3W (Ta), 70W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOIC-EP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
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