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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
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  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NTR3C21NZT3G

ON Semiconductor - NTR3C21NZT3G

KEY Part #: K6392813

NTR3C21NZT3G Pricing (USD) [977235PC Stock]

  • 1 pcs$0.03804
  • 10,000 pcs$0.03785
Nimewo Pati:
NTR3C21NZT3G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 3.6A SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Arrays and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NTR3C21NZT3G electronic components. NTR3C21NZT3G can be shipped within 24 hours after order. If you have any demands for NTR3C21NZT3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTR3C21NZT3G Atribi pwodwi yo

Nimewo Pati : NTR3C21NZT3G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 3.6A SOT23-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 24 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 17.8nC @ 4.5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1540pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 470mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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