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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. NVMFD5875NLT1G

ON Semiconductor - NVMFD5875NLT1G

KEY Part #: K6522697

NVMFD5875NLT1G Pricing (USD) [180797PC Stock]

  • 1 pcs$0.20458
  • 1,500 pcs$0.18598
Nimewo Pati:
NVMFD5875NLT1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 60V 7A SO8FL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs, Diodes - RF, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor NVMFD5875NLT1G electronic components. NVMFD5875NLT1G can be shipped within 24 hours after order. If you have any demands for NVMFD5875NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NVMFD5875NLT1G Atribi pwodwi yo

Nimewo Pati : NVMFD5875NLT1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 60V 7A SO8FL
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A
RD sou (Max) @ Id, Vgs : 33 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 540pF @ 25V
Pouvwa - Max : 3.2W
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : 8-DFN (5x6) Dual Flag (SO8FL-Dual)

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