SI8429DB-T1-E1 Pricing (USD) [202426PC Stock]
- 1 pcs$0.18363
- 3,000 pcs$0.18272
- Nimewo Pati:
- SI8429DB-T1-E1
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 8V 11.7A 2X2 4-MFP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Diodes - RF and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI8429DB-T1-E1 electronic components. SI8429DB-T1-E1 can be shipped within 24 hours after order. If you have any demands for SI8429DB-T1-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8429DB-T1-E1 Atribi pwodwi yo
Nimewo Pati :
SI8429DB-T1-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 8V 11.7A 2X2 4-MFP
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.2V, 4.5V
RD sou (Max) @ Id, Vgs :
35 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 5V
Vgs (Max) :
±5V
Antre kapasite (Ciss) (Max) @ Vds :
1640pF @ 4V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.77W (Ta), 6.25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-Microfoot
Pake / Ka :
4-XFBGA, CSPBGA
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