Toshiba Semiconductor and Storage - TK16A60W,S4X

KEY Part #: K6417722

TK16A60W,S4X Pricing (USD) [39294PC Stock]

  • 1 pcs$1.04506
  • 2,500 pcs$1.03986

Nimewo Pati:
TK16A60W,S4X
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N CH 600V 15.8ADTMOSIV.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK16A60W,S4X Atribi pwodwi yo

Nimewo Pati : TK16A60W,S4X
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 15.8ADTMOSIV
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 790µA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 40W (Tc)
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3 Full Pack