Nimewo Pati :
TK16A60W,S4X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N CH 600V 15.8ADTMOSIV
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
15.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
190 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 790µA
Chaje Gate (Qg) (Max) @ Vgs :
40nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1350pF @ 300V
Disipasyon Pouvwa (Max) :
40W (Tc)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3 Full Pack