IRF7341GTRPBF Pricing (USD) [100763PC Stock]
- 1 pcs$0.38805
- 4,000 pcs$0.37253
- Nimewo Pati:
- IRF7341GTRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 55V 5.1A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF7341GTRPBF electronic components. IRF7341GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7341GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341GTRPBF Atribi pwodwi yo
Nimewo Pati :
IRF7341GTRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 55V 5.1A
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.1A
RD sou (Max) @ Id, Vgs :
50 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Chaje Gate (Qg) (Max) @ Vgs :
44nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
780pF @ 25V
Pouvwa - Max :
2.4W
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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