Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 950V 4A IPAK
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
950V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
19nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
460pF @ 25V
Disipasyon Pouvwa (Max) :
90W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
I-PAK
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA