NTJS3151PT2G Pricing (USD) [858781PC Stock]
- 1 pcs$0.04307
- 6,000 pcs$0.04046
- Nimewo Pati:
- NTJS3151PT2G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET P-CH 12V 2.7A SOT-363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTJS3151PT2G electronic components. NTJS3151PT2G can be shipped within 24 hours after order. If you have any demands for NTJS3151PT2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTJS3151PT2G Atribi pwodwi yo
Nimewo Pati :
NTJS3151PT2G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET P-CH 12V 2.7A SOT-363
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id :
400mV @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
8.6nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
850pF @ 12V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
625mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SC-88/SC70-6/SOT-363
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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