IXYS - IXFA4N100Q

KEY Part #: K6398390

IXFA4N100Q Pricing (USD) [13514PC Stock]

  • 1 pcs$3.35373
  • 10 pcs$2.99368
  • 100 pcs$2.45465
  • 500 pcs$1.98765
  • 1,000 pcs$1.67633

Nimewo Pati:
IXFA4N100Q
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 1000V 4A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in IXYS IXFA4N100Q electronic components. IXFA4N100Q can be shipped within 24 hours after order. If you have any demands for IXFA4N100Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA4N100Q Atribi pwodwi yo

Nimewo Pati : IXFA4N100Q
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 1000V 4A TO-263
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1050pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXFA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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