Deskripsyon :
MOSFET N-CH 1000V 4A TO-263
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
39nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1050pF @ 25V
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-263 (IXFA)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB