Infineon Technologies - IRF1018ESTRLPBF

KEY Part #: K6399316

IRF1018ESTRLPBF Pricing (USD) [115972PC Stock]

  • 1 pcs$0.31893
  • 800 pcs$0.30765

Nimewo Pati:
IRF1018ESTRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 60V 79A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - JFETs, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRF1018ESTRLPBF electronic components. IRF1018ESTRLPBF can be shipped within 24 hours after order. If you have any demands for IRF1018ESTRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF1018ESTRLPBF Atribi pwodwi yo

Nimewo Pati : IRF1018ESTRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 60V 79A D2PAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 79A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 8.4 mOhm @ 47A, 10V
Vgs (th) (Max) @ Id : 4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 69nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2290pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 110W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB