Nimewo Pati :
PHC21025,118
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N/P-CH 30V 8SOIC
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.5A, 2.3A
RD sou (Max) @ Id, Vgs :
100 mOhm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
250pF @ 20V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO