IXYS - IXFA90N20X3

KEY Part #: K6393665

IXFA90N20X3 Pricing (USD) [13592PC Stock]

  • 1 pcs$3.03202

Nimewo Pati:
IXFA90N20X3
Manifakti:
IXYS
Detaye deskripsyon:
200V/90A ULTRA JUNCTION X3-CLASS.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Tiristors - SCR, Transistors - IGBTs - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in IXYS IXFA90N20X3 electronic components. IXFA90N20X3 can be shipped within 24 hours after order. If you have any demands for IXFA90N20X3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFA90N20X3 Atribi pwodwi yo

Nimewo Pati : IXFA90N20X3
Manifakti : IXYS
Deskripsyon : 200V/90A ULTRA JUNCTION X3-CLASS
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 12.8 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5420pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 390W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263AA
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB