Diodes Incorporated - DMN4008LFG-13

KEY Part #: K6394728

DMN4008LFG-13 Pricing (USD) [271359PC Stock]

  • 1 pcs$0.13631
  • 3,000 pcs$0.12112

Nimewo Pati:
DMN4008LFG-13
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 40V 14.4A PWDI3333-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMN4008LFG-13 electronic components. DMN4008LFG-13 can be shipped within 24 hours after order. If you have any demands for DMN4008LFG-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN4008LFG-13 Atribi pwodwi yo

Nimewo Pati : DMN4008LFG-13
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 40V 14.4A PWDI3333-8
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 3.3V, 10V
RD sou (Max) @ Id, Vgs : 7.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3537pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerDI3333-8
Pake / Ka : 8-PowerWDFN