FQP2N80 Pricing (USD) [154355PC Stock]
- 1 pcs$0.23963
- 1,000 pcs$0.23264
- Nimewo Pati:
- FQP2N80
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 2.4A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQP2N80 electronic components. FQP2N80 can be shipped within 24 hours after order. If you have any demands for FQP2N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP2N80 Atribi pwodwi yo
Nimewo Pati :
FQP2N80
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 2.4A TO-220
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.3 Ohm @ 1.2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
550pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
85W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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