BSZ180P03NS3EGATMA1 Pricing (USD) [365089PC Stock]
- 1 pcs$0.10131
- 5,000 pcs$0.09726
- Nimewo Pati:
- BSZ180P03NS3EGATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET P-CH 30V 39.6A TSDSON-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Diodes - Zener - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSZ180P03NS3EGATMA1 electronic components. BSZ180P03NS3EGATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ180P03NS3EGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ180P03NS3EGATMA1 Atribi pwodwi yo
Nimewo Pati :
BSZ180P03NS3EGATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET P-CH 30V 39.6A TSDSON-8
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
18 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
3.1V @ 48µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
2220pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.1W (Ta), 40W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TSDSON-8
Pake / Ka :
8-PowerTDFN
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