DMN62D1LFDQ-13 Pricing (USD) [926229PC Stock]
- 1 pcs$0.03993
- Nimewo Pati:
- DMN62D1LFDQ-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- 2N7002 FAMILY X1-DFN1212-3 TR 1.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Modil pouvwa chofè and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN62D1LFDQ-13 electronic components. DMN62D1LFDQ-13 can be shipped within 24 hours after order. If you have any demands for DMN62D1LFDQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN62D1LFDQ-13 Atribi pwodwi yo
Nimewo Pati :
DMN62D1LFDQ-13
Manifakti :
Diodes Incorporated
Deskripsyon :
2N7002 FAMILY X1-DFN1212-3 TR 1
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
400mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4V
RD sou (Max) @ Id, Vgs :
2 Ohm @ 100mA, 4V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.55nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
36pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-DFN1212-3
Pake / Ka :
3-XDFN
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