SIZ728DT-T1-GE3 Pricing (USD) [132001PC Stock]
- 1 pcs$0.28020
- 3,000 pcs$0.26312
- Nimewo Pati:
- SIZ728DT-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET 2N-CH 25V 16A 6-POWERPAIR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SIZ728DT-T1-GE3 electronic components. SIZ728DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ728DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ728DT-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SIZ728DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 25V 16A 6-POWERPAIR
Seri :
TrenchFET®
Estati Pati :
Obsolete
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A, 35A
RD sou (Max) @ Id, Vgs :
7.7 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
26nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
890pF @ 12.5V
Pouvwa - Max :
27W, 48W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-PowerPair™
Pake Aparèy Founisè :
6-PowerPair™
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