Diodes Incorporated - DMG6602SVTQ-7

KEY Part #: K6525044

DMG6602SVTQ-7 Pricing (USD) [773543PC Stock]

  • 1 pcs$0.04782
  • 3,000 pcs$0.04307

Nimewo Pati:
DMG6602SVTQ-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N/P-CH 30V TSOT26.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMG6602SVTQ-7 electronic components. DMG6602SVTQ-7 can be shipped within 24 hours after order. If you have any demands for DMG6602SVTQ-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG6602SVTQ-7 Atribi pwodwi yo

Nimewo Pati : DMG6602SVTQ-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N/P-CH 30V TSOT26
Seri : -
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.4A, 2.8A
RD sou (Max) @ Id, Vgs : 60 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 15V
Pouvwa - Max : 840mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : TSOT-26

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