Nimewo Pati :
DMG6602SVTQ-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N/P-CH 30V TSOT26
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3.4A, 2.8A
RD sou (Max) @ Id, Vgs :
60 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 15V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè :
TSOT-26