Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. EPC2007

EPC - EPC2007

KEY Part #: K6406612

EPC2007 Pricing (USD) [1259PC Stock]

  • 1,000 pcs$0.44013
Nimewo Pati:
EPC2007
Manifakti:
EPC
Detaye deskripsyon:
GANFET TRANS 100V 6A BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in EPC EPC2007 electronic components. EPC2007 can be shipped within 24 hours after order. If you have any demands for EPC2007, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2007 Atribi pwodwi yo

Nimewo Pati : EPC2007
Manifakti : EPC
Deskripsyon : GANFET TRANS 100V 6A BUMPED DIE
Seri : eGaN®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V
RD sou (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 1.2mA
Chaje Gate (Qg) (Max) @ Vgs : 2.8nC @ 5V
Vgs (Max) : +6V, -5V
Antre kapasite (Ciss) (Max) @ Vds : 205pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -40°C ~ 125°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Die Outline (5-Solder Bar)
Pake / Ka : Die
Ou ka enterese tou
  • IRFR3410TRRPBF

    Infineon Technologies

    MOSFET N-CH 100V 31A DPAK.

  • IRFR1018ETRRPBF

    Infineon Technologies

    MOSFET N-CH 60V 79A DPAK.

  • IRLR024ZTRPBF

    Infineon Technologies

    MOSFET N-CH 55V 16A DPAK.

  • TK40P04M1(T6RSS-Q)

    Toshiba Semiconductor and Storage

    MOSFET N-CH 40V 40A 3DP 2-7K1A.

  • TP0610K-T1

    Vishay Siliconix

    MOSFET P-CH 60V 185MA SOT23.

  • 2N7002E

    Vishay Siliconix

    MOSFET N-CH 60V 240MA SOT23.

Pati cho