STMicroelectronics - STP10NM60N

KEY Part #: K6403123

STP10NM60N Pricing (USD) [29687PC Stock]

  • 1 pcs$1.38820
  • 10 pcs$1.25423
  • 100 pcs$0.95615
  • 500 pcs$0.74367
  • 1,000 pcs$0.61619

Nimewo Pati:
STP10NM60N
Manifakti:
STMicroelectronics
Detaye deskripsyon:
MOSFET N-CH 600V 10A TO220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Zener - Arrays and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in STMicroelectronics STP10NM60N electronic components. STP10NM60N can be shipped within 24 hours after order. If you have any demands for STP10NM60N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STP10NM60N Atribi pwodwi yo

Nimewo Pati : STP10NM60N
Manifakti : STMicroelectronics
Deskripsyon : MOSFET N-CH 600V 10A TO220
Seri : MDmesh™ II
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 550 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : ±25V
Antre kapasite (Ciss) (Max) @ Vds : 540pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 70W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3