Nexperia USA Inc. - BSS192,135

KEY Part #: K6395920

BSS192,135 Pricing (USD) [524810PC Stock]

  • 1 pcs$0.08526
  • 20,000 pcs$0.08483

Nimewo Pati:
BSS192,135
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET P-CH 240V 0.2A SOT89.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Objektif espesyal ...
Avantaj konpetitif:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS192,135 Atribi pwodwi yo

Nimewo Pati : BSS192,135
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET P-CH 240V 0.2A SOT89
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 240V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 12 Ohm @ 200mA, 10V
Vgs (th) (Max) @ Id : 2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 90pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 560mW (Ta), 12.5W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-89
Pake / Ka : TO-243AA