TPH2010FNH,L1Q Pricing (USD) [157178PC Stock]
- 1 pcs$0.24714
- 5,000 pcs$0.24591
- Nimewo Pati:
- TPH2010FNH,L1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 250V 5.6A 8SOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Arrays, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPH2010FNH,L1Q electronic components. TPH2010FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH2010FNH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH2010FNH,L1Q Atribi pwodwi yo
Nimewo Pati :
TPH2010FNH,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 250V 5.6A 8SOP
Seri :
U-MOSVIII-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
198 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
600pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.6W (Ta), 42W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP Advance (5x5)
Pake / Ka :
8-PowerVDFN
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