[13357PC Stock]
- Nimewo Pati:
- IRF6811STR1PBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N CH 25V 19A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6811STR1PBF electronic components. IRF6811STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6811STR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6811STR1PBF Atribi pwodwi yo
Nimewo Pati :
IRF6811STR1PBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 25V 19A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
19A (Ta), 74A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
3.7 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 35µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
1590pF @ 13V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.1W (Ta), 32W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ SQ
Pake / Ka :
DirectFET™ Isometric SQ
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