STW11NM80 Pricing (USD) [12620PC Stock]
- 1 pcs$3.05405
- 10 pcs$2.74865
- 100 pcs$2.26000
- 500 pcs$1.89351
- 1,000 pcs$1.64919
- Nimewo Pati:
- STW11NM80
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 800V 11A TO-247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STW11NM80 electronic components. STW11NM80 can be shipped within 24 hours after order. If you have any demands for STW11NM80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW11NM80 Atribi pwodwi yo
Nimewo Pati :
STW11NM80
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 800V 11A TO-247
Seri :
MDmesh™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
400 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
43.6nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1630pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-65°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247-3
Pake / Ka :
TO-247-3
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