Nimewo Pati :
PMDT290UNE,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET 2N-CH 20V 0.8A SOT666
Seri :
Automotive, AEC-Q101, TrenchMOS™
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
800mA
RD sou (Max) @ Id, Vgs :
380 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
0.68nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
83pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
SOT-666