Nexperia USA Inc. - PMDT290UNE,115

KEY Part #: K6525055

PMDT290UNE,115 Pricing (USD) [753292PC Stock]

  • 1 pcs$0.04935
  • 4,000 pcs$0.04910

Nimewo Pati:
PMDT290UNE,115
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
MOSFET 2N-CH 20V 0.8A SOT666.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMDT290UNE,115 Atribi pwodwi yo

Nimewo Pati : PMDT290UNE,115
Manifakti : Nexperia USA Inc.
Deskripsyon : MOSFET 2N-CH 20V 0.8A SOT666
Seri : Automotive, AEC-Q101, TrenchMOS™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 800mA
RD sou (Max) @ Id, Vgs : 380 mOhm @ 500mA, 4.5V
Vgs (th) (Max) @ Id : 950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.68nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : 83pF @ 10V
Pouvwa - Max : 500mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : SOT-666