ON Semiconductor - FDS6670A

KEY Part #: K6416952

FDS6670A Pricing (USD) [271406PC Stock]

  • 1 pcs$0.14397
  • 2,500 pcs$0.14326

Nimewo Pati:
FDS6670A
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 13A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Diodes - Zener - Single, Transistors - JFETs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDS6670A electronic components. FDS6670A can be shipped within 24 hours after order. If you have any demands for FDS6670A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDS6670A Atribi pwodwi yo

Nimewo Pati : FDS6670A
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 13A 8-SOIC
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2220pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOIC
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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