STB7ANM60N Pricing (USD) [59536PC Stock]
- 1 pcs$0.65675
- 1,000 pcs$0.58685
- Nimewo Pati:
- STB7ANM60N
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 600V DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Modil pouvwa chofè, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - FETs, MOSFETs - Arrays ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STB7ANM60N electronic components. STB7ANM60N can be shipped within 24 hours after order. If you have any demands for STB7ANM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB7ANM60N Atribi pwodwi yo
Nimewo Pati :
STB7ANM60N
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 600V DPAK
Seri :
Automotive, AEC-Q101, MDmesh™ II
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
900 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250mA
Chaje Gate (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±25V
Antre kapasite (Ciss) (Max) @ Vds :
363pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
45W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D2PAK
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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