IRFH8311TRPBF Pricing (USD) [177240PC Stock]
- 1 pcs$0.20869
- 4,000 pcs$0.17833
- Nimewo Pati:
- IRFH8311TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N CH 30V 32A PQFN5X6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Arrays, Transistors - Objektif espesyal and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFH8311TRPBF electronic components. IRFH8311TRPBF can be shipped within 24 hours after order. If you have any demands for IRFH8311TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH8311TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFH8311TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N CH 30V 32A PQFN5X6
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
32A (Ta), 169A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.1 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4960pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.6W (Ta), 96W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PQFN (5x6)
Pake / Ka :
8-TQFN Exposed Pad
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