Vishay Siliconix - IRF9Z14STRLPBF

KEY Part #: K6393072

IRF9Z14STRLPBF Pricing (USD) [89423PC Stock]

  • 1 pcs$0.43726
  • 800 pcs$0.41347

Nimewo Pati:
IRF9Z14STRLPBF
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET P-CH 60V 6.7A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Vishay Siliconix IRF9Z14STRLPBF electronic components. IRF9Z14STRLPBF can be shipped within 24 hours after order. If you have any demands for IRF9Z14STRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF9Z14STRLPBF Atribi pwodwi yo

Nimewo Pati : IRF9Z14STRLPBF
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET P-CH 60V 6.7A D2PAK
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.7W (Ta), 43W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB