ON Semiconductor - HGTP3N60A4

KEY Part #: K6423031

HGTP3N60A4 Pricing (USD) [72140PC Stock]

  • 1 pcs$0.54472
  • 800 pcs$0.54201

Nimewo Pati:
HGTP3N60A4
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 600V 17A 70W TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor HGTP3N60A4 electronic components. HGTP3N60A4 can be shipped within 24 hours after order. If you have any demands for HGTP3N60A4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HGTP3N60A4 Atribi pwodwi yo

Nimewo Pati : HGTP3N60A4
Manifakti : ON Semiconductor
Deskripsyon : IGBT 600V 17A 70W TO220AB
Seri : -
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 17A
Kouran - Pèseptè batman (Icm) : 40A
Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 3A
Pouvwa - Max : 70W
Oblije chanje enèji : 37µJ (on), 25µJ (off)
Kalite Antre : Standard
Gate chaje : 21nC
Td (on / off) @ 25 ° C : 6ns/73ns
Kondisyon egzamen an : 390V, 3A, 50 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220-3