Nimewo Pati :
SIHG47N60E-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 600V 47A TO247AC
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
47A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
64 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
220nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
9620pF @ 100V
Disipasyon Pouvwa (Max) :
357W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC