DMT6018LDR-13 Pricing (USD) [375240PC Stock]
- 1 pcs$0.09857
- Nimewo Pati:
- DMT6018LDR-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET 2 N-CH 60V 11.4A DFN3030.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMT6018LDR-13 electronic components. DMT6018LDR-13 can be shipped within 24 hours after order. If you have any demands for DMT6018LDR-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6018LDR-13 Atribi pwodwi yo
Nimewo Pati :
DMT6018LDR-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET 2 N-CH 60V 11.4A DFN3030
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
8.8A (Ta)
RD sou (Max) @ Id, Vgs :
17 mOhm @ 8.2A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
13.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
869pF @ 30V
Pouvwa - Max :
1.9W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
V-DFN3030-8
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