IXTN660N04T4 Pricing (USD) [4427PC Stock]
- 1 pcs$9.86829
- 10 pcs$8.96949
- 100 pcs$7.25216
- Nimewo Pati:
- IXTN660N04T4
- Manifakti:
- IXYS
- Detaye deskripsyon:
- 40V/660A TRENCHT4 PWR MOSFET SOT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in IXYS IXTN660N04T4 electronic components. IXTN660N04T4 can be shipped within 24 hours after order. If you have any demands for IXTN660N04T4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTN660N04T4 Atribi pwodwi yo
Nimewo Pati :
IXTN660N04T4
Manifakti :
IXYS
Deskripsyon :
40V/660A TRENCHT4 PWR MOSFET SOT
Seri :
TrenchT4™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
660A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
0.85 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
860nC @ 10V
Vgs (Max) :
±15V
Antre kapasite (Ciss) (Max) @ Vds :
44000pF @ 25V
Karakteristik FET :
Current Sensing
Disipasyon Pouvwa (Max) :
1040W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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