TPN2R304PL,L1Q Pricing (USD) [335682PC Stock]
- 1 pcs$0.11746
- 5,000 pcs$0.11688
- Nimewo Pati:
- TPN2R304PL,L1Q
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 40V 80A TSON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Arrays, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TPN2R304PL,L1Q electronic components. TPN2R304PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2R304PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN2R304PL,L1Q Atribi pwodwi yo
Nimewo Pati :
TPN2R304PL,L1Q
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 40V 80A TSON
Seri :
U-MOSIX-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
2.3 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 0.3mA
Chaje Gate (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3600pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
630mW (Ta), 104W (Tc)
Operating Tanperati :
175°C
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSON Advance (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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