IRF9910TRPBF Pricing (USD) [174721PC Stock]
- 1 pcs$0.21170
- 4,000 pcs$0.20099
- Nimewo Pati:
- IRF9910TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2N-CH 20V 10A/12A 8-SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - JFETs, Tiristors - TRIACs and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF9910TRPBF electronic components. IRF9910TRPBF can be shipped within 24 hours after order. If you have any demands for IRF9910TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9910TRPBF Atribi pwodwi yo
Nimewo Pati :
IRF9910TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
10A, 12A
RD sou (Max) @ Id, Vgs :
9.3 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.55V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
900pF @ 10V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO
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