ON Semiconductor - FDMD8260L

KEY Part #: K6523046

FDMD8260L Pricing (USD) [58340PC Stock]

  • 1 pcs$0.67357
  • 3,000 pcs$0.67022

Nimewo Pati:
FDMD8260L
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 60V 6-MLP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMD8260L electronic components. FDMD8260L can be shipped within 24 hours after order. If you have any demands for FDMD8260L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMD8260L Atribi pwodwi yo

Nimewo Pati : FDMD8260L
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 60V 6-MLP
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A
RD sou (Max) @ Id, Vgs : 5.8 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 5245pF @ 30V
Pouvwa - Max : 1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 12-PowerWDFN
Pake Aparèy Founisè : 12-Power3.3x5

Ou ka enterese tou
  • IRF5810TRPBF

    Infineon Technologies

    MOSFET 2P-CH 20V 2.9A 6-TSOP.

  • DMC25D0UVT-7

    Diodes Incorporated

    MOSFET N/P-CH 25V/30V TSOT26.

  • FDY2000PZ

    ON Semiconductor

    MOSFET 2P-CH 20V 0.35A SOT-563F.

  • BSL308CH6327XTSA1

    Infineon Technologies

    MOSFET N/P-CH 30V 2.3A/2A 6TSOP.

  • ZXMN2AM832TA

    Diodes Incorporated

    MOSFET 2N-CH 20V 2.9A 8MLP.

  • DMN2019UTS-13

    Diodes Incorporated

    MOSFET 2N-CH 20V 5.4A TSSOP-8.