TK4R3E06PL,S1X Pricing (USD) [47232PC Stock]
- 1 pcs$0.91146
- 50 pcs$0.73469
- 100 pcs$0.66123
- 500 pcs$0.51430
- 1,000 pcs$0.42613
- Nimewo Pati:
- TK4R3E06PL,S1X
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK4R3E06PL,S1X electronic components. TK4R3E06PL,S1X can be shipped within 24 hours after order. If you have any demands for TK4R3E06PL,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK4R3E06PL,S1X Atribi pwodwi yo
Nimewo Pati :
TK4R3E06PL,S1X
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
X35 PB-F POWER MOSFET TRANSISTOR
Seri :
U-MOSIX-H
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
7.2 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id :
2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
48.2nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
3280pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
87W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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