FQP6N80C Pricing (USD) [41564PC Stock]
- 1 pcs$0.94072
- 1,000 pcs$0.32459
- Nimewo Pati:
- FQP6N80C
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 800V 5.5A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQP6N80C electronic components. FQP6N80C can be shipped within 24 hours after order. If you have any demands for FQP6N80C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP6N80C Atribi pwodwi yo
Nimewo Pati :
FQP6N80C
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 800V 5.5A TO-220
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
2.5 Ohm @ 2.75A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
1310pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
158W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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