Nimewo Pati :
EFC6601R-TR
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2N-CH EFCP
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 2.5V Drive
Drenaj nan Voltage Sous (Vdss) :
-
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
-
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
-
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-XFBGA, FCBGA
Pake Aparèy Founisè :
EFCP2718-6CE-020