ON Semiconductor - EFC6601R-TR

KEY Part #: K6523241

EFC6601R-TR Pricing (USD) [370455PC Stock]

  • 1 pcs$0.10034
  • 5,000 pcs$0.09984

Nimewo Pati:
EFC6601R-TR
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH EFCP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF and Tiristors - SCR - Modil yo ...
Avantaj konpetitif:
We specialize in ON Semiconductor EFC6601R-TR electronic components. EFC6601R-TR can be shipped within 24 hours after order. If you have any demands for EFC6601R-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EFC6601R-TR Atribi pwodwi yo

Nimewo Pati : EFC6601R-TR
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH EFCP
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate, 2.5V Drive
Drenaj nan Voltage Sous (Vdss) : -
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-XFBGA, FCBGA
Pake Aparèy Founisè : EFCP2718-6CE-020